化学抛光技术在晶体材料中的应用研究_毕业论文.docVIP

化学抛光技术在晶体材料中的应用研究 摘 要 化学抛光是目前唯一能获得全局平面化效果的平整化技术H2SO4、H2O21∶1的溶液为化学抛光液，抛光1小时，此工艺为石榴石晶片合适的化学抛光工艺。抛光后晶片表面在10×10μm2范围内平均粗糙度达到0.3536nm，与传统商用硅片抛光后效果相当。此抛光工艺的获得，解决了石榴石晶体在应用于高能激光器时由于表面粗糙影响输出功率的问题。 关键词 化学抛光；Yb:YAG晶体；原子力显微镜；平均粗糙度 Study on chemical polishing of crystals material Abstract Chemical polishing is the only technology to achieve the overall plane currently. In this paper, chemical polishing of the garnet crystal is studied. Comparing the effect of different chemical polishing solution on polishing the sample, the sample polishing at room temperature and high temperature, different polishing