25.0Radel.ppt.pptVIP

High Fluence Implantation of Helium in Tungsten R.F. Radel, G.L. Kulcinski, S.J. Zenobia HAPL Meeting-Rochester, NY November 9th, 2005 Fusion Technology Institute University of Wisconsin-Madison Progress Since the Last Meeting Tungsten sample has been irradiated to 10 times previous levels with energetic helium ions Characterization of high fluence (1020 He+/cm2) irradiated sample has begun Work has begun on the development of pulsed IEC operation The He+ energy spectra on the first wall and the IEC sample temperatures were re-evaluated The IEC Voltage Capability Covers Nearly 25% of the Ions at the First Wall IEC Run Extended He+ Implantation Database to 1020 Ions/cm2 Previous maximum fluence was 1019 He+/cm2 Irradiation was performed at 30 kV, 6 mA, 0.5 mTorr, and 1150 °C This is equivalent to 20 effective full power days in the reference HAPL design (all helium energies) It is also equivalent to ~ 100 effective full power days in the reference HAPL design ( 10 keV He+ 100 keV) Higher Fluence Yielded Additional Pore Formation and Degradation of Surface High Temperature Irradiation of Tungsten Produced Drastic Changes in the Surface Morphology Measured Mass Loss was Observed at 5x the Calculated Physical Sputtering Rate Experimental sputtering yield is ~0.038 atoms/ion at 30 keV for ┴ incidence (Roth, et. al.-1980) Based on these results, 2x1020 He+ on a 2 cm2 sample would physically sputter a maximum of ~2.1 mg (without redeposit) Measured mass loss was 10.2±0.1 mg The mass difference may be due to flaking or other discrete particle loss mechanisms Implications of Material Loss Reference HAPL chamber could lose 48 mm/FPY due to low energy He alone Physical sputtering from other light ions (H+, D+, T+) could contribute another 6 mm/FPY Additional damage from carbon and heavier ions could further increase this loss These processes could result in the formation of a minimum of ~80 kg/FPY of radioactive dust in the chamber Systematic Pyrometer