4StructureandPropertiesofDislocationsinSilicon-InTech.PDFVIP

4 Structure and Properties of Dislocations in Silicon 1 2 Manfred Reiche and Martin Kittler 1Max Planck Institute of Microstructure Physics, Halle 2IHP microelectronics, Frankfurt (Oder) Germany 1. Introduction Defects in crystalline materials modify locally the periodic order in a crystal structure. They characterize the real structure and modify numerous physical and mechanical properties of a crystal. Crystal defects are generally divided by their dimension: point defects are also known as zero-dimensional (0-D) defects, while dislocations are 1-D, twins and grain boundaries are 2-D, and precipitates are denoted as 3-D defects. Dislocations were implemented for the first time in the early 1900th to explain the elastic behavior of homogeneous, isotropic media. Based on Volterra´s “distorsioni” (Volterra, 1907), Love has introduced the term “dislocation” to describe a discontinuity of displacement in an elastic body (Love, 1927). The application of this term to denote a particular elementary type of deviation from the ideal crystal lattice structure was due to Orowan (1934), Polanyi (1934), and Taylor (1934a, 1934b). A dislocation is characterized by a vector parallel to the dislocation line and a displacement or Burgers vector which is a certain finite increment induced by the elastic displacement vector . The Burge