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Nature of interfacial defects and their roles in strain relaxation at highly lattice mismatched 3 C -SiC/Si (001) interface C. Wen, Y. M. Wang, W. Wan, F. H. Li, J. W. Liang, and J. Zou Citation: Journal of Applied Physics 106, 073522 (2009); doi: 10.1063/1.3234380 View online: /10.1063/1.3234380 View Table of Contents: /content/aip/journal/jap/106/7?ver=pdfcov Published by the AIP Publishing [This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: /termsconditions. Downloaded to ] IP: 03 On: Mon, 17 Feb 2014 14:45:44 JOURNAL OF APPLIED PHYSICS 106, 073522 2009 Nature of interfacial defects and their roles in strain relaxation at highly lattice mismatched 3C-SiC/Si „001… interface C. Wen,1,2 Y. M. Wang,1 W. Wan,1 F. H. Li,1,a,b J. W. Liang,3 and J. Zou4,a,c 1 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China 2 School of Science, Southwest University of Science and Technology, Mianyang 621010, China 3 RD Center for Optoelectronic Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China 4 Centre for Microscopy and Microanalysis and Materials Engineering, The University of Queensland, St. Lucia, Queensland 4072, Australia Received 28 July 2009; accepted 23 August 2009; published online 15 October 2009 Misfit defects in a 3C-SiC/Si 001 interface were investigated using a 200 kV high-resolution