《Metal Based Wafer Bonding》.pdfVIP

Metal Based Wafer Bonding Techniques for Wafer Level Packaging Document #4| Best Known Practices Series | December 1, 2009 Author: Dr. Shari Farrens, SUSS MicroTec Inc. MEMS Industry Group | 1620 Murray Ave, Pittsburgh, PA 15217 | | 412.390.1644 1 Scope of the Practice This BKP (Best Known Practice) describes the necessary co nditions required to successfully utilize metal based wafer bonding techniques, including diffusion and eutectic bonding, for wafer level packaging. Problem Statement and Goals of the Best Practice Wafer level bonding utilizing metal based technologies are coming to the forefront of manufacturing methods in numerous 3D integration schemes and advanced MEMS processing. Copper to copper bonding of TSVs (through silicon vias) is used for 3D IC stacking of individual layers as well as in 3D packaging operations. A primary differentiator is the via size and therefore the placement accuracy needed to obtain production yields. Meanwhile gold and aluminum diffusion bonding and numerous eutectic alloys are replacing traditional MEMS glass based bonding methods and allow for higher degrees of hermeticity. The increased hermeticity enables device scaling and vertical packaging options that dramatically reduce production costs. This document describes the necessary conditions for these metal based bonding processes. General Description of Approach/Strategy Types of Metal Bonds: There are two broad categories of wafer level bonds using metals. Diffusion bonds using copper to copper are very popular for 3D integration using TSV fabrication scenarios. In MEMS device packaging, gold and aluminum diffusion bonding methods are more common. The second category of metal bonding technologies includes a variety of metal alloying methods called eutectics. The eutectic is a specific alloy composition that ch