Thermal infrared emission from biased graphene - IBM.pdfVIP

LETTERS PUBLISHED ONLINE: 9 MAY 2010 | DOI: 10.1038/NNANO.2010.90 Thermal infrared emission from biased graphene Marcus Freitag , Hsin-Ying Chiu, Mathias Steiner, Vasili Perebeinos and Phaedon Avouris * 1,2 3,4 − The high carrier mobility and thermal conductivity of gra- where hv is the energy of the G phonon, EL is the laser excitation phene make it a candidate material for future high-speed elec- energy, and xS,AS are Stokes/anti-Stokes Raman susceptibilities. tronic devices5. Although the thermal behaviour of high-speed Because the graphene absorption is essentially constant, xS and devices can limit their performance, the thermal properties of xAS are the same, and the measurements can be performed at the graphene devices remain incompletely understood. Here, we same value of EL. In the second method, use is made of the fact show that spatially resolved thermal radiation from biased gra- that the shift of the Raman G′ band scales with temperature as 21 21 phene transistors can be used to extract the temperature distri- DvG′ /DT ¼ 20.034 cm K (ref. 9). Both Raman methods bution, carrier densities and spatial location of the Dirac point show good agreement with the temperatures extracted from the in the graphene channel. The graphene exhibits a temperature thermal radiation. maximum with