电磁Czochralski系统中硅熔体中热量传递与氧传输机理.pdfVIP

Journal of Crystal Growth 243 (2002) 55–65 Mechanisms of heat and oxygen transfer in silicon melt in an electromagnetic Czochralski system Koichi Kakimoto*, Akimasa Tashiro, Takashige Shinozaki, Hideo Ishii, Yoshio Hashimoto Research Institute for Applied Mechanics, Kyushu University, 6-1, Kasuga-Koen, Kasuga 816-8580, Japan Received 27 August 2001; accepted 20 May 2002 Communicated by J.J. Derby Abstract The three-dimensional time-dependent flow of silicon melt in an electromagnetic Czochralski system was numerically investigated. Two different types of electrodes were used in the mathematical modelin gto determine the mechanisms of heat and oxygen transfer in the melt. The results showed that electromagnetic force in the azimuthal direction suppressed natural convection due to centrifugal force. It was also shown that heat and oxygen transfer from a crucible wall to the solid–liquid interface was enhanced due to off-centered vortices. r 2002 Elsevier Science B.V. All rights reserved. PACS: 47.27.I; 47.27.E; 81.10.Aj Keywords: A1. Computer simulation; A2. Czochralski method; B2. Semiconductin gsilicon 1. Introduction crystal of silicon with a large diameter. This is due to unstable flow of the melt in a large crucible [1], The oxygen concentration in a silicon crystal which results in an asymmetric temperature dis- grown in a crucible is usually controlled by tribution. rotatin gthe crystal and the crystal. The control The shape of the solid–liquid interface also plays can be achieved by the modifications