微电子专业英语翻译.pdfVIP

2.5 Generation and Recombination Processes 载流子产生与复合过程 3. Characteristics of Diodes二极管特性 3.1 Introduction介绍 Pn junction Alloying (合金）Epitaxy （外延） Diffusion （扩散）Ion implantation （离子 注入） 2.5 Generation and Recombination Processes 载流子产生与复合过程 2 Whenever the thermal-equilibrium condition is disturbed (i.e.,pn ≠ n ) , i 2 processes exist to restore the syetem to equilibrium(i.e.pn=n ).In the case of i the injection of excess carriers, the mechanism that restores equilibrium is recombination of the injected minority carrier with the majority carriers. Depending on the nature of the recombination process, the released energy that results from the recombination process can be emitted as a photon or dissipated as heat to the lattice. When a photon is emitted , the process is called radiative recombination ;otherwise, it is called nonradiative recombination. 当热平衡条件受到扰乱时 （即pn≠ni2 ），会出现一些使系统回复平衡的机制 （即 pn=ni2 ）。在超量载流子注入的情形下，回复平衡的机制是将注入的少数载流子 与多数载流子复合。视复合过程的本征而定，复合过程所释放出的能量，一般以 光子形式辐射出或是对晶格产生热而消耗掉。一个光子被辐射出，此过程称为辐 射复合，反之则称为非辐射复合。 Recombination phenomena can be classified as direct and indirect processes . Direct recombination , also called band-to-band recombination , usually dominates in direct-bandgap semiconductors , such as gallium arsenide ; while indirect recombination via bandgap recombination centers dominates in indirect bandgap semiconductors , such as silicon. 复合现