参考资料--双轴应变材料温度特性研究.docVIP

摘要 随着器件尺寸的不断减小，Si基微电子技术面临着物理和工艺极限的挑战，已经不能满足摩尔定律。而应变Si/SiGe具有能带可调，迁移率高的优点，并且能与传统的Si基工艺兼容，应变技术成为后Si时代研究的热点。众所周知，应变器件的制造工艺和正常工作都不可避免的要考虑温度的影响，而目前国内对于这方面的研究还比较少，基于此目的，本论文主要研究了双轴应变材料的温度特性。 论文分析了应变Si基材料的物理特性和应力的产生机制，讨论了常见的应力引入方式和应力测定的两种方法。 建立双轴应变SiGe模型之后，运用Silvaco软件加以仿真和验证。在此基础上，从理论方面分析了Ge组分对应力的影响，并通过Silvaco进行仿真，证实了应力会随着Ge组分的增大而增大。由于高温下，原子间的共价键会发生断裂，应力会逐渐释放，论文通过Silvaco软件重点对应变SiGe的温度特性进行了仿真研究，仿真结果证实了温度对应力的影响。最后，理论分析了双轴应变材料的迁移率增强机制，通过仿真得到双轴应变材料迁移率随温度的变化趋势。 关键词：双轴应变， SiGe Ge组分，温度，迁移率  ABSTRACT As the size of device decreases, the Si-based micro-electronics technology faces the challenge of physics and process limitations. As the outstanding performance，the Silicon strained technology becomes the research focus of the post-Si era. Research of the paper focuses on temperature characteristic of the biaxial strained material. In the paper, the crystal structure of the biaxial strain silicon material, the methods of introducing stress, physical and electrical properties are firstly analyzed. Applying the generalized Hookes law, then extract the 81 elastic stiffness coefficients about Ge component, achieve the conversion of Ge component and stress, established the model of the correspondence between biaxial silicon strain material stress and the Ge component ,and simulate it through Silvaco software, the simulation result is consistent with the theoretical analysis. On the basis of the above studies, this paper focuses on the analysis of the effect of temperature figure of the stress and mobility of biaxial strain silicon material, then simulate them through crafts software , the simulation results show that stress and mobility of strained SiGe decreases with increasing temperature, consistent with the theoretical analysis..The results of this study can provide a theoretical basis and practical basis for the design and manufacture of biaxial strain silicon devices and circuits. Keyword : biaxial strain, SiGe, temp