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- 2016-08-23 发布于河南
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Chapter 2-Basic MOS Device Physics
Basic MOS Device PhysicsQuestions for chapter 2 (3) (13). Plot the MOS device small-signal model if the channel-length modulation and body effect are considered. (14). Describe the relationship between the output resistance ro and the channel-length modulation coefficient ?. (15). Describe the relationship between the body effect transconductance gmb and the transconductance gm. (16). What type of MOS device do we prefer to use wherever possible in the analog IC design? And why? (17). Page 39: Ex. 2.1 (18). Page 39: Ex. 2.2 (19). Page 45: Ex. 2.25 Basic MOS Device Physics 1. In analog circ
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