CREERFMD宽带放大器参数对比.docVIP

CREE RFMD 氮化镓（GaN）90W 、120W、280W功率晶体管放大器型号汇总 厂家：CREE 型号：CGH40090PP 90 W, RF Power GaN HEMT 主要参数： ?Up to 3 GHz Operation ?16 dB Small Signal Gain at 2.0 GHz ?12 dB Small Signal Gain at 3.0 GHz ?100 W Typical PSAT ?55 % Efficiency at PSAT ?28 V Operation ?Use as a Pair of 45 W Transistors 型号：CGH40120F 120-W, RF Power GaN HEMT 主要参数：?Up to 2.5 GHz Operation ?20 dB Small Signal Gain at 1.0 GHz ?15 dB Small Signal Gain at 2.0 GHz ?120 W Typical PSAT ?70 % Efficiency at PSAT ?28 V Operation 型号：CGH40180PP 180 W, RF Power GaN HEMT 主要参数：?Up to 2.5 GHz Operation ?20 dB Small Signal Gain at 1.0 GHz ?15 dB Small Signal Gain at 2.0 GHz ?220 W typical PSAT ?70 % Efficiency at PSAT ?28 V Operation 型号：CGHV22100 100-W, 1800 – 2200 MHz, GaN HEMT for LTE 主要参数：?1.8 – 2.2 GHz operation ?20-dB gain ?-35 dBc ACLR at 50-W PAVE ?31 – 35% efficiency at 50-W PAVE ?High degree of DPD correction can be applied 型号：CGH22200 200-W, 1800 – 2200 MHz, GaN HEMT for LTE 主要参数：?1.8 – 2.2 GHz operation ?18-dB gain ?-35 dBc ACLR at 50-W PAVE ?31 – 35% efficiency at 50-W PAVE ?High degree of DPD correction can be applied 型号：CGHV27100 100-W, 2500 – 2700 MHz, 50-V, GaN HEMT for LTE 主要参数： ?2.5 – 2.7 GHz operation ?18-dB gain ?-37 dBc ACLR at 25-W PAVE ?33% efficiency at 25-W PAVE ?High degree of DPD correction can be applied 型号：CGHV27100 200-W, 2500 – 2700 MHz, GaN HEMT for LTE 主要参数： ?2.5 – 2.7 GHz operation ?16-dB gain ?-37 dBc ACLR at 40-W PAVE ?29% efficiency at 40-W PAVE ?High degree of DPD correction can be applied 厂家：RFMD 型号：RF3934 120W GaN Wide-Band Power Amplifier? 主要参数： Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain = 13dB at 2GHz 48V Operation Typical Performance Output Power 140W at P3dB Drain Efficiency 60% at P3dB -40°C to 85°C Operating? Temperature 型号：RF3928 280W GaN Wideband Pulsed Power Amplifier? 主要参数： Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Tec