SnO薄膜晶体管技术总结.ppt

P-type oxide semiconductor SnO Outline Literature research Introduction Experimental method Experimental properties Discussion Literature research 1 P-channel thin-film transistor using p -type oxide semiconductor, SnO Yoichi Ogo, Hidenori Hiramatsu,Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, and Hideo Hosono Applied Physics Letters 93, 032113 (2008) Introduction Transparent amorphous oxide semiconductors (TAOSs) are easily fabricated at low temperature and exhibit sufficient performance. TFTs using TAOs channels offer field-effect mobilities of on/off current ratios of ~108. N-channel TFTs have good performance. Developing p-channel TFTs are challenging because p-type oxide semiconductors have low hole mobility. SnO is a good candidate for a p-type semiconductor due to its Sn 5s nature at VBM. SnO has a high hole mobility and can be used to produce good p-type oxide TFTs. Experimental method SnO films were grown on (001) YSZ substrates using PLD. base pressure : a single-phase SnO ceramic target annealing in a vacuum at 200°C for 5 min Tg : 575°C PO2 : growth rate: 5.6 nm/min Figure(a). Structure of a top-gate TFT. Experimental properties Analysis of figure(b) Figure(b). Output characteristics. increases as VDS decreases from 0 to -10V. Negative VGS increases to 16 as VDS decreases down to -10 V. Discussion P-channel TFT using SnO has high performance. High-quality epitaxial films were grown on YSZ (001) single-crystal substrates in high-temoerature process(575°C). Literature research 2 Sputtering formation of p -type SnO thin-film transistors on glass toward oxide complimentary circuits H. Yabuta, N. Kaji, R. Hayashi, H. Kumomi, K. Nomura, T. Ka