2016设计简介.pptVIP

共模噪声使用组件,则为ur值较高,饱和度较低之磁性材料,其滤波作用为楞次效应,下图所示: EMI知识简介 VG=jwL1Il+jwMI2+I1L1 (1) VG=jwL2I2+jwMI1+R2I2 (2) VG-jwMI1 I2= jwL2+R2 (3) L1=L2=M=L I1= VGR2 jwL(R2+RN)+R2RN VL= R2/L Jw+ VG R2 L 元 Evaluation only. Created with Aspose.Slides for .NET 3.5 Client Profile 5.2.0.0. Copyright 2004-2011 Aspose Pty Ltd. 故只要尽可能降低Ri之值, EMI知识简介 则共模噪声可降低于最低. 高频时,电感组件将如下图所示,杂散电容C开始时组件之频率特性者影响: R-损失阻抗 C1-杂散电容 L , 使L Ri W Zn= R2+W2(L-CR2-W2L2C2)2 (1-W2LC)2+W2C2R2 Evaluation only. Created with Aspose.Slides for .NET 3.5 Client Profile 5.2.0.0. Copyright 2004-2011 Aspose Pty Ltd. 电容: 电容组件如同电感组件一