场效应管放大电路17461.pptVIP

Chapter 4Field-Effect Transistor Amplifiers 4.1 Field-Effect Transistors 4.2 FET Amplifiers 4.1 Field-Effect Transistors Two types: junction field-effect transistor(JFET) and the metal-oxide-semiconductor FET(MOSFET)。 4.1.1 Junction Field-Effect Transistors(结型场效应管) 1. Structure and Operation(结构及工作） 1) Basic Structure and Symbol(基本结构及符号) 2) Operation 2． Characteristics(特性) 1) Transfer Characteristic(转移特性) The relation between iD and uGS for a certain uDS(在uDS一定时, 漏极电流iD与栅源电压uGS之间的关系)。 2) Drain Characteristic(漏极输出特性) 4.1.2 Metal-oxide-semiconductor FETs(绝缘栅型场效应管) 1. Enhancement-mode MOSFET(增强型绝缘栅场效应管) 1) Structure and Symbol(结构及符号) 2) Characteristics(特性) （1） Transfer Characteristic of N-channel Enchancement-mode MOSFET when uGS≥UT, 2. Depletion-mode MOSFET N-channel depletion-mode MOSFET （a） Transfer characteristic （b） Drain characteristic 4.2 FET Amplifiers The common-source JFET amplifier Small-signal JFET parameters Calculate gm algebraically and graphically Small-signal model of JFET A common-source JFET amplifier with fixed bias The small-signal equivalent circuit Example The JFET in the amplifier circuit has IDSS=12mA,VP=-4V,and rd=100k. 1. Find the quiescent values of ID and VDS. 2. Find gm. 3. Draw the equivalent circuit. 4. Find the voltage gain. Solution: Bias-stabilized JFET amplifiers Self-biased JFET amplifier Example The JFET has transconductance 4000?S at its bias point. Its drain resistance is 100k. Assuming small-signal conditions, find the overall voltage gain, VL/VS. Unbypassed source resistor Common-drain amplifier Example The JFET in the circuit has gm=5×10-3S and rd=100k. Find 1. the input resistance; 2. the voltage gain. Solution: Common-gate amplifier Small-signal MOSFET amplifiers For depletion-type MOSFET, the parameter of small-signal model is identical to the parameter