[OC32090207I1.jsp.pptVIP

核外电子云密度越大, 屏蔽效应越强, 要发生共振吸收就势必增加外加磁场强度, 共振信号将移向高场区. 反之, 共振信号将移向低场区. 2) 化学位移 不同化学环境的H核, 受到不同程度的屏蔽效应的影响, 因而吸收峰出现在核磁共振谱的不同位置上.这种吸收峰在位置上的差异称为化学位移. Evaluation only. Created with Aspose.Slides for .NET 3.5 Client Profile 5.2.0.0. Copyright 2004-2011 Aspose Pty Ltd. Evaluation only. Created with Aspose.Slides for .NET 3.5 Client Profile 5.2.0.0. Copyright 2004-2011 Aspose Pty Ltd. 化学位移(δ)的表示方法: ν试样 ——试样的共振频率; νTMS ——标准样品的共振频率; ν0 ——核磁共振仪的固定频率; ; 为什么选用TMS(四甲基硅烷)作为标准样品呢? δ值是一个负值, 为方便起见, 去掉负号. 因此, δ值大时表明信号在低场, δ值小时表明信号在高场. 屏蔽效应强, 共振信号在高场区（δ值规定为0）, 绝大多数吸收峰均出现在它的左边. 结构对称,12个H核是等同的, 因此是一个单峰. 容易回收(b.p低), 与样品不缔合. Evaluation only. Created with Aspose.Slides for .NET 3.5 Client Profile 5.2.0.0. Copyright 2004-2011 Aspose Pty Ltd. Evaluation only. Created with Aspose.Slides for .NET 3.5 Client Profile 5.2.0.0. Copyright 2004-2011 Aspose Pty Ltd. 3) 影响化学位移的因素 (诱导效应和各向异性效应) 元素的电负性↑, 通过诱导效应, 使H核的电子云密度↓, 屏蔽效应↓, 共振信号→低场. 诱导效应: Evaluation only. Created with Aspose.Slides for .NET 3.5 Client Profile 5.2.0.0. Copyright 2004-2011 Aspose Pty Ltd. Evaluation only. Created with Aspose.Slides for .NET 3.5 Client Profile 5.2.0.0. Copyright 2004-2011 Aspose Pty Ltd. Evaluation only. Created with Aspose.Slides for .NET 3.5 Client Profile 5.2.0.0. Copyright 2004-2011 Aspose Pty Ltd. Evaluation only. Created with Aspose.Slides for .NET 3.5 Client Profile 5.2.0.0. Copyright 2004-2011 Aspose Pty Ltd. 各向异性效应: (烯、炔、芳香化合物) 烯烃双键碳上的H核位于π键环流电子产生的感生磁场与外加磁场方向一致的区域（称为去屏蔽区）, 去屏蔽效应的结果, 使烯烃双键碳上的H质子的共振信号移向稍低的磁场区, 其δ= 4.5~6. Evaluation only. Created with Aspose.Slides for .NET 3.5 Client Profile 5.2.0.0. Copyright 2004-2011 Aspose Pty Ltd. Evaluation only. Created with Aspose.Slides for .NET 3.5 Client Profile 5.2.0.0. Copyright 2004-2011 Aspose Pty Ltd. 同理, 羰基碳上的H质子与烯烃双键碳上的H质子相似, 也是处于去屏蔽区, 存在去屏蔽效应, 但因氧原子电负性的影响较大, 所以, 羰基碳上的H核的共振信号出现在更低的磁场区, 其δ= 9.4~10. Evaluation only. Created with Aspose.Slides for .NET 3.5 Client Profile 5.2.0.0. Copyright 2004-2011 Aspose Pty Ltd. Evaluation only. Created with Aspo