溶胶凝胶法制备高熵合金.docVIP

Sol-Gel法制备LaNiO3／ Bi4Ti3O12薄膜及性能研究 摘要 本文铁电薄膜的发展历程研究现状，其主要制备方法溶胶-凝胶法在硅衬底上制备Bi4Ti3O12薄膜讨论各种可能影响薄膜制备的因素如原料、前驱体溶液浓度、镀膜快慢及环境温度等；对薄膜进行SEM电镜扫描，对不同退火温度下的BTO薄膜的生长行为、铁电、介电性能进行研究700℃烧结的薄膜质量好；对比发现，若退火温度过大，会使薄膜剩余极化略减小，降低了薄膜的铁电性能BTO薄膜。 关键词 Bi4T3O12 薄膜；铁电薄膜；溶胶-凝胶（Sol-Gel）法；铁电性能；介电性能  Ferroelectric Properties and Fatigue of LaNiO3／ Bi4T3O12 Thin Films Prepared by Sol-Gel Method In this paper, we discussed the pros and cons of the major preparation methods basic on the basis of large ferroelectric thin film research and development process research. Under the existing experimental conditions, we decided to fabricate the films on the Si substrates by the sol - gel method. Through specific experiments, first, we discussed various factors that may affect the Films, such as raw materials, precursor concentration, coating speed and environmental temperature. Then, through the thin films of SEM and X-ray diffraction analysis, research the growth , ferroelectric properties and dielectric properties of different annealing temperature behavior of BTO thin films. Found, 700 ℃ sintering of the film quality is best. And contrast found that if the annealing temperature is too large, would slightly reduce the remanent polarization of the films, which reduces the ferroelectric properties. Thus found the optimum preparation conditions BTO film. Key words Bi4T3O12 Thin film; Sol-Gel method; Ferroelectric properties; Dielectric properties.  索引目录 - 4 - 1.1 铁电薄膜概念及其发展历史简介 - 4 - 1.2 铁电薄膜的性能 - 5 - 1.2.1 铁电薄膜的自发极化特性 - 6 - 1.2.2 铁电薄膜的压电效应 - 6 - 1.2.3 铁电薄膜的热电效应 - 7 - 1.2.4 电滞回线 - 7 - 1.3 铁电薄膜的制备方法简介 - 9 - 1.3.1 溶胶-凝胶法 - 9 - 1.3.2金属有机物化学气相沉积法 - 9 - 1.3.3脉冲激光沉积法 - 10 - 1.3.4磁控溅射沉积法 - 10 - 1.4 课题研究目的与意义 - 11 - 第二章 Bi4T3O12叠层薄膜的制备和性能研究 - 11 - 2.1 前言 - 11 - 2.2 Bi4T3O12薄膜的制备 - 12 - 2.2.1 钛酸铋前驱体的配制 - 12 - 2.2.2 Bi4T3O12 薄膜制备过程 - 12 - 2.3 Bi4T3O12 薄膜制备的影响因素 - 12 - 2.3.1制备薄膜所用的原料： - 13 - 2.3.2前躯体溶液的浓度 - 13 - 2.3.3镀膜的快慢 - 13 - 2.3.4温度环境 - 14 - 2.4本章结论 - 14 - 第三章 LaNiO薄膜的性能