第十七讲未来趋势与挑战.pptVIP

*/45 Top view Cross section Wafer SiO2 poly-Si Si0.2Ge0.8 SiN STL的工艺流程，2 */45 Top view Cross section Wafer SiO2 poly-Si Si0.2Ge0.8 SiN SiN STL的工艺流程，3 */45 Top view Cross section Wafer SiO2 poly-Si SiN Resist STL的工艺流程，4 */45 Top view Cross section Wafer SiO2 poly-Si SiN Resist STL的工艺流程，5 */45 Top view Cross section Wafer SiO2 poly-Si SiN Resist STL的工艺流程，6 */45 Top view Cross section Wafer SiO2 poly-Si STL的工艺流程，7 SiN */45 10 poly-Si lines Width=45 nm poly-Si contact H=15 nm W=15 nm poly-Si NiSi 50nm 150nm Si STL的工艺流程，8 */45 Fin W=35 nm Fin H=27 nm L=70 nm Zhang Qiu et al. IEEE EDL May 2