MOCVDgrowthofGaAS.pptVIP

MOCVD growth of GaAS ??? ???? ??? Contents VPE MOCVD Grow mechanism MOCVD process Surface process Conclusion VPE (vapor phase epitaxy) All reactants in vapor phase, deposited on heated substrate MOCVD (Metalorganic chemical vapor deposition) History - growth thin single crystals of GaAs by Manasevit, in 1968 - Source : trimethylgallium(TMGa) - arsine(AsH3) - H2 - Pyrolized temp.: 600~700℃ - Substrate: GaAs, sapphire or others - Basic reaction : Ga(CH3)3 + AsH3 → GaAs+2CH4 advantages compared to other VPE - Irreversible reaction - Relatively low temperatures (minimized effect of interdiffusion) - Phosphorus poses no problems compared to MBE disadvantages - in-situ etching is not possible - AsH3 are very toxic CVD Reactor configuration Growth mechanism MOCVD process Mass transport Carry reactants to reaction cell Laminary boundary layer above growth surface (determined by Ptot and Vgas) Diffusion of reactants througth laminary boundary layer Chemical reactions about 200 chemical reactions involved Net reaction for GaAs for TMG and arsine Thermodynamics Rate constants Dictate the deviation from equilibrium Maximum growth rate Physical surface processes Surface diffusion MOCVD growth kinetics Surface process Deposition Surface diffusion Competition – deposition versus surface diffusion 2D growth – step flow growth or 2D island nucleation 3D growth – 3D island nucleation, roughening Deposition Deposition of atoms ( or precusor molecules) from the gas phase Deposition rate: R sometimes measured in [nr of atoms/s-cm2] Surface diffusion Surface diffusion: random movement (Brownian motion), hopping between sites Difussion constant, D : D=Do exp(-Ea/kT) [cm2/s] Do : attempt frequency Ea: activation energy Surface diffusion length Competition between diffusion and deposition Layer-by-layer growth Growth by successive completion of monolayers Step flow growth or 2D island nucleation Surface roughness Very low λ(low T or high R) lea