irg4pc40u.pdfVIP

PD 91466E INSULATED GATE BIPOLAR TRANSISTOR IRG4PC40U UltraFast Speed IGBT Features ? UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, 200 kHz in resonant mode ? Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 ? Industry standard TO-247AC package C G E n-channel VCES = 600V VCE(on) typ. = 1.72V @VGE = 15V, IC = 20A Benefits ? Generation 4 IGBTs offer highest efficiency available ? IGBTs optimized for specified application conditions ? Designed to be a drop-in replacement for equivalent industry-standard Generation 3 IR IGBTs Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Parameter Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Thermal Resistance RθJC RθCS RθJA Wt Parameter Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight TO-247AC Max. 600 40 20 160 160 ±20 15 160 65 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf?in (1.1N?m) Units V A V mJ W °C Min. --------------------- Typ. -----0.24 -----6 (0.21) Max. 0.77 -----40 ------ Units °C/W g (oz) 1 12/30/00 IRG4PC40U Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)CES V(BR)ECS Collector-to-Emitter Breakdown Voltage 600 Emitter-to-Collector Breakdown Voltage T 18 ?V(BR)CES/?TJ Temperature Coeff. of Breakdown Voltage ---- VCE(on) Collector-to-Emitter Saturation Voltage ---- ---- ---- VGE(th) Gate Threshold Voltage 3.0 ?VGE(th)/?TJ Temperature Coeff. of Threshold Voltage ---- gfe Forward Transconductance U 11 ---- ICES Zer