chapitre8.ppt

Harbin Institute of Technology, China Prof. Y. HU * July, 2014 IC Level Leakage: Example Field oxide leakage – 0.5 mm technology: 0 1 2 3 4 5 1.0E-12 1.0E-10 1.0E-08 1.0E-06 1.0E-04 1.0E-02 VG (V) I (A) prerad 10 Krad 38 Krad 420 Krad 1.9 Mrad FOXFET W/L= 10 mm/ 1 mm with polysilicon gate for Vcontact= 3.3 V Vcontact (V) 61krad 0 1 2 3 3.3 I (A) 1.0E-12 1.0E-10 1.0E-08 1.0E-06 1.0E-04 104 Krad prerad 10 Krad 38 Krad 1.9 Mrad FOXFET W/L= 10 mm/ 1.4 mm Without polysilicon gate Harbin Institute of Technology, China Prof. Y. HU * July, 2014 Decrease of Mobility and Transconductance The mobility degradation is essentially related to increase of the interface traps DNit, since the conduction in a MOS transistor is due to the carrier motion close to the silicon-oxide interface: Reduction of transconductance of the transistor Increase of noise The mobility degradation is generally higher for n-channel transistors. Harbin Institute of Technology, China Prof. Y. HU * July, 2014 Single Event Effects (SEE) (1) Single event effects are phenomena caused by a single high energetic particle passing through in integrated circuits. This high energy particle is: Protons or neutrons Heavy ions Sensitive volume Nuclear reaction proton, neutron Sensitive volume Nuclear elastic reaction proton, neutron Sensitive volume Direct ionisation heavy ion Harbin Institute of Technology, China Prof. Y. HU * July, 2014 Single Event Effects (SEE) (2) These phenomena generate an immediate malfunctioning of one or more transistors which can then influence the entire circuit: Soft errors: the generated errors can be reversible. Transient : spurious signals are asynchronous and propagate in the circuit during one clock cycle. Static: static errors can be corrected by outside control. They overwrite information stored in the circuit, but a rewrite of power cycle can correct the errors with no permanent damage. Hard errors: the errors are destructive