固体光电子论课后习题(南邮).docx

1.2A 1.6 eV photon is absorbed by a valence band electron in GaAs. If the bandgap of GaAs is 1.41 eV, calculate the energy of the electron and heavy hole produced by the photon absorption. Condition:Solution:ByWe can get1.4The absorption coefficient near the bandedges of GaAs and Si are and respectively. What is the minimum thickness of a sample in each case which can absorb 90% of the incident light?Condition:Solution:ByWe can getSo1.8In a GaAs sample at 300K, equal concentrations of electrons and holes are injected. If the carrier density is n=p=1017cm-3, Calculate the electron and hole Fermi levels using the Boltzmann and Joyce-Dixon approximations.Condition:Solution:Boltzmann approximation:Joyce-Dixon approximation:1.12The radiative lifetime of GaAs sample is 1.0 ns. The sample has a defect at the midgap with a capture cross-section of 10-15cm2 . At what defect concentration does the non-radiative lifetime become equal to the radiative lifetime at i) 77K and ii) 300K?(分电子、空穴计算)Condition:Solution:(1)For electronsSo(2)For holesSo1.13Electrons are injected into a p-type silicon sample at 300K. The e-h radiative lifetime is 1μs. The sample also has midgap traps with a cross-section of 10-15cm2 and a density of 1016cm-3. Calculate the diffusion length for the electronsif the diffusion coefficient is 30 cm2/s.Condition:Solution:ByWe getThenSo2.1The bandgap of alloy is given by the expressionCalculate the composition of an alloy which gives a cutoff wavelength of a)b).Solution:ByWe get2.2Calculate the cutoff wavelength for a GaAs detector. If the cutoff wavelength is to be decreased to 0.7μm, how much AlAs must be added to a GaAs? Assume that the bandgap of is given bySolution:ByWe get2.4An optical power density of 1W/cm2 is incident on a GaAsSample. The photon energy is 2.0eV and there is no reflection from the surface. Calculate the excess electron-hole carrier densities at the surface and 0.5μm from the surface. The e-h recombination time is 10-8s.Condition:Solutio