F59L1G81MA(2Y).pdf

ESMT F59L1G81MA (2Y) Elite Semiconductor Memory Technology Inc. Publication Date: Jul. 2014 Revision: 1.1 1/44 Flash 1 Gbit (128M x 8) 3.3V NAND Flash Memory FEATURES Voltage Supply: 3.3V (2.7V~3.6V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte Page Read Operation - Page Size: (2K + 64) Byte - Random Read: 25us (Max.) - Serial Access: 25ns (Min.) (3.3V) Memory Cell: 1bit/Memory Cell Fast Write Cycle Time - Program time: 300us - typical - Block Erase time: 3ms - typical Command/Address/Data Multiplexed I/O Port Hardware Data Protection - Program/Erase Lockout During Power Transitions Reliable CMOS Floating Gate Technology - ECC Requirement: - 4bit/512Byte, - Endurance: 100K Program/Erase cycles - Data Retention: 10 years Command Register Operation Automatic Page 0 Read at Power-Up Option - Boot from NAND support - Automatic Memory Download NOP: 4 cycles Cache Program Operation for High Performance Program Cache Read Operation Copy-Back Operation EDO mode OTP Operation Bad-Block-Protect ORDERING INFORMATION Product ID Speed Package Comments F59L1G81MA -25TG2Y 25 ns 48 pin TSOPI Pb-free F59L1G81MA -25BG2Y 25 ns 63 ball BGA Pb-free F59L1G81MA -25BCG2Y 25 ns 67 ball BGA Pb-free GENERAL DESCRIPTION The device is a 128Mx8bit with spare 4Mx8bit capacity. The device is offered in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. The device contains 1024 blocks, composed by 64 pages consisting in two NAND structures of 32 series connected Flash cells. A program op