Graphene-based Thermal Interface Materials.pptVIP

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Graphene-based Thermal Interface Materials

Graphene-based Thermal Interface Materials (TIM) A proposal submitted to CTRC (Cooling Technologies Research Center) Principle investigators: Yong P. Chen (Physics, ECE and Birck Nanotechnology Center) Xiulin Ruan (ME) Tim S Fisher (ME and Birck Nanotechnology Center) Purdue University Why Graphene (discovered 2004) c a b Graphene: extraordinary thermal conductivity ~ 3000-5000 W/mK [Nano Lett. 8, 902–907, 2008] (highest among materials – responsible for the high thermal conductivity of graphite (ab-plane) and CNT! Graphene: building block for most carbon materials ---incl. graphite and carbon nanotubes(CNT) Recently, carbon materials (incl. both graphite and CNT) investigated as attractive thermal interface material (TIM) motivated by their high thermal conductivity Other advantages of graphene: High packing density [due to 2D] rich shapes/geometry Easily functionalized Possibilities to bond to surface Research Objectives Develop high performance TIM based on graphene Approach 1 (focus): Vertically grown (CVD) graphene sheets between (and bonded to) substrates Approach 2 (reference): Graphite micro platelets/powder between substrates Components: material (TIM) design synthesis/fabrication thermal measurements modeling Some key issues: -Bonding of filler material (graphene) to surface -Adhesion between filler materials Metrics to Achieve: Material thermal conductivity 1000 W/mK Interface thermal resistance 1 mm2K/W Approach 1: Vertically Grown Graphene Sheets by CVD Malesevic et al., Nanotechnology’2008 substrate substrate Gas precursor (eg. CH4) Carbon deposition Chemical Reaction on surface Carbon PECVD apparatus available in Purdue/Birck (Fisher) Microwave plasma enhanced (PE) chemical vapor deposition (CVD) grows vertically aligned graphene sheets No catalyst needed Works on almost any substrate graphene bonded to substrate surface can have very high filling/packing density Key idea: CVD grow vertical graphene between two s

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