irfs3006-7ppbf.pdf

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irfs3006-7ppbf.pdf

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irfs3006-7ppbf

10/06/08 1 HEXFETPower MOSFET Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits S D G 96187 IRFS3006-7PPbF G D S Gate Drain Source VDSS 60V RDS(on) typ. 1.5m max. 2.1m ID (Silicon Limited) 293A ID (Package Limited) 240A Absolute Maximum Ratings Symbol Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current PD @TC = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V dv/dt Peak Diode Recovery V/ns TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy mJ IAR Avalanche Current A EAR Repetitive Avalanche Energy mJ Thermal Resistance Symbol Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.4 RθJA Junction-to-Ambient (PCB Mount) ––– 40 -55 to + 175 ± 20 2.5 10lbin (1.1Nm) Max. 293 207 1172 240 °C A °C/W 300 303 See Fig. 14, 15, 22a, 22b, 375 11 2 S D G Pulse width ≤ 400μs; duty cycle ≤ 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniquea refer to applocation note #