IPP60R099CPA_MOSFET.pdfVIP

IPP60R099CPA CoolMOSTM Power Transistor Features ? Worldwide best R ds,on in TO220 ? Ultra low gate charge ? Extreme dv/dt rated ? High peak current capability ? Automotive AEC Q101 qualified ? Green package (RoHS compliant) CoolMOS CPA is specially designed for: ? DC/DC converters for Automotive Applications Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T C=25 °C A T C=100 °C Pulsed drain current1) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=11 A, V DD=50 V 800 mJ Avalanche energy, repetitive t AR 1),2) E AR I D=11 A, V DD=50 V Avalanche current, repetitive t AR 1),2) I AR A MOSFET dv /dt ruggedness dv /dt V DS=0...480 V V/ns Gate source voltage V GS static V Power dissipation P tot T C=25 °C W Operating temperature T j °C Storage temperature T stg Mounting torque M3 and M3.5 screws 60 Ncm Value 31 19 93 1.2 11 50 ±20 -40 ... 150 255 -40 ... 150 V DS 600 V R DS(on),max 0.105 Ω Q g,typ 60 nC Product Summary PG-TO220-3-1 Type Package Marking IPP60R099CPA PG-TO220-3-1 6R099A Rev. 2.2 page 1 2009-11-25 not recom m ended for new designs IPP60R099CPA Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous diode forward current I S A Diode pulse current1) I S,pulse 93 Reverse diode dv /dt 3) dv /dt 15 V/ns Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thJC - - 0.5 K/W R thJA leaded - - 62 Soldering temperature, wavesoldering only allowed at leads T sold 1.6 mm (0.063 in.) from case for 10 s - - 260 °C Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 μA 600 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=1.2 mA 2.5 3 3.5 Zero gate voltage drain current I DSS V DS=600 V, V GS=0 V, T j=25 °C - - 5 μA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA D