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Magetoresistance of RuO_2-based resistance thermometers below 0.3 K
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1
Magnetoresistance of RuO2-based resistance thermometers below 0.3 K
Michio Watanabe,1? Masashi Morishita,2 and Youiti Ootuka2
1Dept. Applied Physics and Physico-Informatics, Keio University, Yokohama 223-8522, Japan
2Institute of Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8571, Japan
(Received 11 July 2000; accepted 26 March 2001)
We have determined the magnetoresistance of RuO2-based resistors (Scientific Instruments (SI)
RO-600) between 0.05 and 0.3 K in magnetic fields up to 8 T. The magnetoresistance is negative
around 0.5 T and then becomes positive at larger fields. The magnitude of the negative magnetore-
sistance increases rapidly as the temperature is lowered, while that of the positive magnetoresistance
has smaller temperature dependence. We have also examined the temperature dependence of the re-
sistance below 50 mK in zero magnetic field. It is described in the context of variable-range-hopping
(VRH) conduction down to 15 mK. Hence, the resistors can be used as thermometers down to at
least 15 mK.
I. INTRODUCTION
As promising low-temperature thermometers, RuO2-
based thick-film chip resistors have been introduced (for
example [1]). The advantages of such resistors are repro-
ducibility and reasonably small magnetoresistance. In
order to implement the accuracy of the thermometry in
magnetic fields, a lot of works has been devoted to the
magnetoresistance measurements of RuO2-based resis-
tors [2–11]. Unfortunately, the magnetoresistance seems
to be dependent on the detail of the manufacturing pro-
cess. In the case of commercial resisters, results vary even
in the sign of the magnetoresistance depending upon the
manufacturing company as summarized in [8, Table 1].
Recently RuO2-based resistors produced by Scientific
Instruments Inc. (SI) are used in many laboratories.
However, there is no substantial publication on their
ma
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