NXPSemiconductorsMETLDMOSModel-Freescale.PDFVIP

Freescale Semiconductor’s MET LDMOS Model 1. Description of the Model The MET LDMOS model [1] is an electro thermal model that can account for dynamic self-heating effects and was specifically tailored to model RF high power LDMOS transistors and RF ICs used in base station, digital broadcast, land mobile and subscriber applications. It has been implemented in both the Agilent EEsof ADS and AWR Corporation Microwave Office? harmonic balance simulators and is capable of performing small-signal, large-signal, harmonic-balance, noise and transient simulations. The MET model is an empirical large signal nonlinear model, which is single-piece and continuously differentiable and includes static and dynamic thermal dependencies. This model is capable of accurately representing the current-voltage characteristics and their derivatives at any bias point and operating temperature. A single continuously differentiable drain current equation models the subthreshold, triode, high current saturation and drain to source breakdown regions of operation. A set of static thermal equations governing the electro-thermal behavior of the drain to source nonlinear current model parameters were developed by measuring the nonlinear drain current under pulsed voltage conditions at different operating temperatures, ensuring an isothermal measurement environment. Pulsed S-parameters were used to develop equations to model the capacitance functions of voltage and temperature, which were described by functions that have no poles and facilitate robust numerical stability. The nonlinear capacitances were extracted with a small signal model that represents the small signal limit of the device nonlinear behavior at any given bias point. Using a thermal analogue circuit, as in many previous circuit models, the MET LDMOS model accommodates thermal effects. The self- consistent temperature determined by