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金属纳米晶存储器存储特性的模拟
Hans Journal of Nanotechnology 纳米技术, 2011, 1, 49-55
/10.12677/nat.2011.13010
Published Online November 2011 (/journal/nat)
Simulation of Memory Characteristics of
Metal Nanocrystals
Bei Wang, Peihong Cheng, Shihua Huang
*
Department of Physics, Zhejiang Normal University, Jinhua
Email: huangshihua@
Received: Oct. 9th, 2011; revised: Nov. 7th, 2011; accepted: Nov. 8th, 2011.
Abstract: Using a transient electrical model, the charging, discharging and retentive processes in a metal
nanocrystal (NC) memory were simulated. In this model, the impact of Si surface potential,
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