EOS的了解.pdf

TI Recommendations for EOS Prevention and Elimination TI有关预防和消除EOS的建议 March 10, 2010 2010年3月10 日 TI Information TI信息– Selective Disclosure 选择性披露 Objectives 目标 Help customers reduce EOS issues. 帮助客户减少EOS问题 Provide general guidelines to reduce EOS risk in assembly lines and electrical test areas. 提供通用指导，帮助降低在装配流水线和测试区域发生EOS的风险 Provide general guidelines for protection against EOS in system, board, and software design. 提供通用指导，帮助提升系统、电路板和软件设计来防护EOS Describe steps taken by TI and by customers to address EOS return units. 叙述了为解决返回产品的EOS问题，TI和客户所采取的步序 TI Information TI信息– Selective Disclosure 选择性披露 2 Introduction 引言 What is EOS? 什么是EOS ？ EOS – Stands for Electrical Overstress. During an EOS event, a device is subjected to a voltage or current beyond the device specification limits that leads to device failure. EOS – 代表电过应力。元件遭遇电压或电流超过其技术规格，致使元件失效，发生EOS现象。 ESD – Stands for Electrostatic Discharge. Transfer of electrostatic charge between surfaces at different potentials. Typically, it is a high voltage (1kV-10 kV), short time (1 ns to 100 ns), high current (1-10 Amps) event. The energy is typically in the micro-Joule range and can cause silicon melting and gate oxide breakdown. ESD is a subset of EOS. ESD – 代表静电放电，指静电荷在不同静电势表面间传输。通常，它是高电压(1kV-10 kV)、瞬间(1 ns - 100 ns)和高电流(1-10 Amps)效应，其能量落在微焦耳范围，并可能产生熔硅和栅氧层击穿。ESD是 EOS的一种。 EOS (that is not caused by ESD) – The exposure of an item to a current or voltage beyond its maximum rating. Typically, it is an over-voltage stress that involves low voltage (5-10 V), long time (1 ms to 10 ms), and moderate current (100 mA to 1 Amp). The energy could be an order of magnitude higher than ESD and can cause extensive oxide, metal and/or