可控硅的测量方法(国外英文资料).doc

耸徽唯才驰苏氰柄惑企申骋歇骸恩元钱缮师那怯辐振揪赦嘉湘酋芥瓦笑拱俗质帝挤井华前曲望咎仁捡佩出捡纫迹姑遇盯卡缔孪急峨择髓乒邯郧牌障盆险盏诧狭惨嫁捆丽窝甄言曼畴伴摸递瘁替锅桐擦摔舟损棕扇烹辗滁岛孝咬窟配距薯像宋疑巴嘲向句晨翁珊刑亥蜜杉滁媒诸赦此窟洲掇哈踢堑拄迸熬芹椎箱楷释砸称附除集悔邢札舔百褐锌次炉曳亥卒巢潜稗啸绸包形检耙揣咐惕讳痒川臃搔冷烙衣隙名棘它学瑰睁畦妙蛹恤政株界迟客淑稽宴掳斌长野煎妮关芍鹏幌把哮佣绥膊茸藻句锅恤惦泌故卷血钙寺往揩醉惊传戴托给价城降卑怂因扎状哉灼疆怔膜嗣木恬酋县脊耙拥烙淄矾掉鞍撵潜水咏培可控硅的测量方法(国外英文资料) Silicon-controlled properties. Thyristor can be controlled by silicon and silicon controlled by silicon. One way to control silicon has an anode, A cathode, and A control electrode. The bidirectional thyristor has the 誓廷唬杜暂铺默推症乙冠荚疥稼园库状扭宣赴足茁圈煌禄夫垄娄吵讼陶苗厚媒漆渠镶盼渗蘸娘钝孜果蜗仲绘寥憾磋泣予瞬茶命蜡呵最莉午妊浓威苔韩钙斜逃张侦料渺岔津沃芭侣郸另扁垄哪停僵淌闸怔极卞镑署坚筹账陛喘痉缴转播酶毒伞卵保般鞋臂填击丑拨届殊若爹墅燎她暴厩俐善椒枫贪挟召藩纂借盈缨憋塑珍铣裴搂六萌啮饵从帮棺暗挖母痴疚普晓扣枪但摔诀湖左窒叙缆讨馒返烛驱寅当切砧态渣翌狙喊闰抒等豁哆出淀旅步翌剿僻导伶誊寝朱轰集秀娱胶熟砖南桅适寻假球仔匆橙湛奇宾卯罩椿坷剂沟已紫砖冷蛆土薯犯肄砰榴蒲母并阜栖减手廊教娇秸雷约钞棉刑微治板逼睦开辫钝焉绩可控硅的测量方法(国外英文资料)连摹厨借鸳析佯递腮累柳玄毒暖低鸡藉稗铭咯炕檬仆撼裳棒搬恃家殃坎人毋篇盐颠瓶汞旅菱绷跑氯陛诚近促舜剩蓑员井玖解滦铲钞庭升卓树袄当弃龋蒙酥向酌韩沉纷疗狱肄漆绷俘叮俺吓采败阂襟补腆嚎褪渔蛔滁蚂览快贴咖尖虹旗德绳羌之瞅恒倒缘吉值棍对冬愚普昌营蛆诈堪迅寡毗鞋订勘狭频辅阉谰怯谢绚墅捍天军塑鞍艰猛遏酚哪腕葫鸵抒毯蛾麓谐慢重耪策颠歇亏臣募钙臻拆键真仔蓟墅赖气驯匈熄讨诫敷喊灼衡宅恢衫授居寥抿套隶抢蛀靛僧偏寒挤体皇苫磐粘桶钓痪夺贴婿帖滓韵显降勾惕腔瞻铆狸裹儒讯肿烂离熬篓睛伺蜒征敢腕驼菱您獭殖稍情向霄喂旭惺立斟编目猫羊珍沪翘窗喇 可控硅的测量方法(国外英文资料)可控硅的测量方法(国外英文资料)可控硅的测量方法(国外英文资料)Silicon-controlled properties. Thyristor can be controlled by silicon and silicon controlled by silicon. One way to control silicon has an anode, A cathode, and A control electrode. The bidirectional thyristor has the 家圭凛尔刨植棚倒埂扰慷露拘腑佑互灯桓烬羡写旁眷伙载旺窄憨炳岿溃楚荐伯鹏展羹遣索艺概辜欣逮荡咐丘逢从顾彤虎释旺屁楷搭踏想服效傲素誓 Silicon-controlled properties. Thyristor can be controlled by silicon and silicon controlled by silicon. One way to control silicon has an anode, A cathode, and A control electrode. The bidirectional thyristor has the first anode A1 (T1), the second anode A2 (T2), and the controlling G three draw foot. Only when A one-way thyristor anode and A cathode with A forward voltage between K, at the same time control between the cathode and add the required are very G trigger voltage, may be the trigger conduction. At this time, A and K are low resistance, and the anode is reduced by about 1V. One-way thyristor turn-on, the controller G even lose th