HAT2165H__MOS管.pdf

HAT2165H Silicon N Channel Power MOS FET Power Switching REJ03G0004-0500Z (Previous ADE-208-1632C (Z)) Rev.5.00 Apr.09.2003 Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 2.5 mΩ typ. (at VGS = 10 V) Outline LFPAK 5 4 3 2 5 1 D 4 G 1, 2, 3 Source 4 Gate 5 Drain S S S 1 2 3 Rev.5.00, Apr.09.2003, page 1 of 10 HAT2165H Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS ±20 V Drain current ID 55