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61C256英文数据手册
IC61C256AH
Document Title
32K x 8 High Speed SRAM
Revision History
Revision No History Draft Date Remark
0A Initial Draft March 23,2001
0B Revise typo of tHA on page 7 October 18,2001
0C Add SOP package type February 18,2002
0D Revise typo of sop size at page 2,9 April 19,2002
The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications and
products. ICSI will answer to your questions about device. If you have any questions, please contact the ICSI offices.
Integrated Circuit Solution Inc. 1
AHSR010-0D 4/19/2002
IC61C256AH
32K x 8 HIGH-SPEED CMOS STATIC RAM
FEATURES DESCRIPTION
• High-speed access times: 10, 12, 15, 20, 25 ns The ICSI IC61C256AH is very high-speed, low power, 32,768
word by 8-bit static RAMs. They are fabricated using ICSI's
• Low active power: 400 mW (typical) high-performance CMOS technology. This highly reliable pro-
• Low standby power cess coupled with innovative circuit design techniques, yields
-- 250 µW (typical) CMOS standby access times as fast as 8 ns maximum.
-- 55 mW (typical) TTL standby When CE is HIGH (deselected), the device assumes a standby
• Fully static operation: no clock or refresh mode at which the power dissipatio
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