液晶电视新IC 资料281622-ETB5.pdf

HY5DU28422ET HY5DU28822ET HY5DU281622ET 128Mb DDR SDRAM HY5DU28422ET HY5DU28822ET HY5DU281622ET This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.4 /July 2004 HY5DU28422ET HY5DU28822ET HY5DU281622ET Revision History Revision History Draft Date Remark No. 0.1 Define Preliminary Specification Sep. 2003 0.2 Insert CL3 in Speed Grade(-J) Oct. 2003 0.3 Editorial Changes Jul. 2004 1) Changed Document Title from 128M to 128Mb 2) Changed Parameter name from Ambient Temperature to Operating Temperature in ABSOLUTE MAXIMUM RATINGS 3) Updated High, Low Current Level of Output Driver Strength in DC 0.4 Aug. 2004 OPERATING CONDITIONS 4) Corrected 6th note and Added 7th note in DC OPERATING CONDITIONS 5) Editorial Changes Rev. 0.