HGTP20N60A4;中文规格书,Datasheet资料.pdf

HGTG20N60A4, HGTP20N60A4 Data Sheet December 2001 600V, SMPS Series N-Channel IGBTs Features The HGTG20N60A4 and HGTP20N60A4 are MOS gated • 100kHz Operation at 390V, 20A high voltage switching devices combining the best features • 200kHz Operation at 390V, 12A of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state • 600V Switching SOA Capability conduction loss of a bipolar transistor. The much lower o o • Typical Fall Time. . . . . . . . . . . . . . . . . 55ns at TJ = 125 C on-state voltage drop varies only moderately between 25 C and 150oC. • Low Conduction Loss This IGBT is ideal for many high voltage switching • Temperature Compensating SABER™ Model applications operating at high frequencies where low conduction losses are essential. This device has been • Related Literature optimized for high frequency switch mode power - TB334 “Guidelines for Soldering Surface Mount supplies. Components to PC Boards Formerly Developmental Type TA49339. Packaging Ordering Information JEDEC T