专业英语1分析.pptVIP

1.3 PN Junction Fig.1 (a) Simplified geometry of A pn junction;(b) doping profile of an ideal uniformly doped pn junction . Fig.2 The space charge region, the electric field, and the forces acting on the charged carriers. 1.3 PN Junction The solution of construct electron-energy diagrams. Start by putting the Fermi level on paper for one of the layers of semiconductor-any on will do. Build the band round this Fermi level. The conduction band is close to the Fermi level for n-type material, but the valence band is close in p-type material. Draw the other Fermi levels at the right height on the diagram, allowing for applied voltages. The more positive of two layers is nearer the bottom of the page. Complete these bands, keeping the gap between conduction and valence bands constant. 1.3 PN Junction The solution of construct electron-energy diagrams. (5) Join up the conduction band from each layer to the next, using S-shaped double curves, and do the same for the valence band. (6) Fill in details such as free carriers, doping ions, and applied voltages. Remember that doping ions are present in depletion layers, but that large numbers of free carriers are not. 1.3 PN Junction Fig.3 (a) zero bias, (b) reverse bias, and (c) forward bias. 1.3 PN Junction Fig.4 The current-voltage characteristic on two different scales. 1.3 PN Junction Fig.5 Current-voltage characteristics of a practical Si diode. 1.3 PN Junction Fig.6 Curve showing the concept of the small-signal diffusion resistance. 1.3 PN Junction Fig.7 Illustrating the variation of depletion layer charge and width with junction voltage. 1.3 PN Junction Fig.8 Voltage dependence of the small-signal junction capacitance Cj and the small signal diffusion capacitance Cd of a junction diode. 1.3 PN Junction Fig.9 Small-signal equivalent circuit of a diode. 1.3 PN Junction P36: The total current crossing the junction is composed of the sum of the diffusion and drift components. At equilibrium, the net current crossing the