迷走神经刺激保护脑缺血：减轻炎症反应是其机制之一.docVIP

迷走神经刺激保护脑缺血：减轻炎症反应是其机制之一 来自中国解放军总医院的孙正辉教授所在团队，前期研究进行刺激迷走神经保护脑出血的实验。证实不论对于短暂性局灶性脑缺血还是永久性局灶性脑缺血，在脑缺血0.5h后即给予1h的迷走神经刺激，24h后也都能够观察到脑梗死体积减小。来自美国的Ay的研究也证实了这一点。 虽然Ay及孙正辉等的研究都证实迷走神经刺激对脑缺血有保护作用，但还未对其相关联的炎症机制进行深入的探讨。当缺血性脑卒中发生后会触发一系列的炎症反应，炎症反应会进一步加重脑损伤。促炎细胞因子如肿瘤坏死因子α和白细胞介素6可诱发炎症，促进炎症介质的分泌作用，加重缺血神经元损伤。既往研究表明通过刺激迷走神经可发挥抑制炎症作用，从而为保护缺血性脑卒中造成的脑损伤创造了可能。 此次，孙正辉等以长期交流电刺激局灶性脑缺血模型大鼠胸锁乳头肌迷走神经，发现经迷走神经刺激的脑缺血大鼠脑梗死体积明显缩小，脑组织中炎症因子肿瘤坏死因子α和白细胞介素6表达明显下降，且神经功能明显改善，从而证实迷走神经刺激对脑缺血损伤的神经保护作用与下调促炎细胞因子有关，为迷走神经刺激进一步应用于脑缺血脑保护治疗提供实验数据。将这项成果撰写的文章发表在《中国神经再生研究（英文版）》杂志2015年4月第4期。 Article: Electrical stimulation of the vagus nerve protects against cerebral ischemic injury through an anti-inflammatory mechanism, by Yao-xian Xiang1, Wen-xin Wang1, Zhe Xue1, Lei Zhu2, Sheng-bao Wang1, Zheng-hui Sun1 (1 Department of Neurosurgery, Chinese PLA General Hospital, Beijing, China; 2 Department of Radiology, Beijing Electric Power Hospit, Beijng, China) Xiang YX, Wang WX, Xue Z, Zhu L, Wang SB, Sun ZH (2015) Electrical stimulation of the vagus nerve protects against cerebral ischemic injury through an anti-inflammatory mechanism. Neural Regen Res 10(4):576-582. 欲获更多资讯：Neural Regen Res Electrical stimulation of the vasgus nerve protects against ischemic brain injury A team of scientists led by Prof. Zheng-hui Sun, Chinese PLA General Hospital, China investigated the neuroprotective effects of electrical stimulation of the vasgus nerve on cerebral ischemia and found that no matter in transient or permanent focal cerebral ischemia, after 1 hour electrical stimulation of the vasgus nerve starting at 0.5 hours after cerebral ischemia, reduced cerebral infarct volume was observed 24 hours later. This finding was also confirmed by Ay et al. Ay et al. and Sun et al. both confirmed that electrical stimulation of the vasgus nerve exhibits neuroprotective effects on cerebral ischemia, but the anti-inflammatory mechanism was not be further investigated. Ischemic stroke can trigger a series of inflammatory reactions, which can