林沛锌、王庆钧、黄振荣、梁沐旺、吴庆辉-机械工业杂志.PDFVIP

光電產業設備技術專輯 率增加 27.5 %。退火後之銦摻雜氧化鋅薄膜電阻 關鍵詞(Keyword) 率約為 6×10-4 Ω-cm。而以銦摻雜氧化鋅薄膜為 透明導電層之發光二極體元件，退火後，在順向 ．原子層沉積 Atomic Layer Deposition, ALD 電流 20 mA下測量其電壓為 3.26 V，發光效率增 ．透明導電層 Transparent Conductive Layer, TCL 加 12.5 %。 ．氧化鋅 zinc oxide, ZnO Ga and In-doped ZnO films were prepared by atomic layer deposition (ALD), and were employed 摘要(Abstract) to serve as the transparent conductive layers (TCLs) in the InGaN-based light-emitting diodes (LEDs). It 本論文探討原子層沉積法製備銦、鎵摻雜之 was found that the ALD-grown Ga and In-doped -4 氧化鋅薄應用在氮化銦鎵發光二極體透明導電層 ZnO films exhibited a low resistivity at mid 10 對元件特性之影響。退火後之摻雜鎵之氧化鋅薄 Ω-cm and high optical transparency (~ 90 % at 450 膜在發光波段 450奈米之穿透率約為 95.8 %，其 nm) after they were properly annealed. InGaN-based 電阻率約為 4.6×10 -4 Ω-cm。而覆蓋退火後之鎵 LEDs having annealed In or Ga-doped ZnO TCL 摻雜氧化鋅薄膜之氮化銦鎵發光二極體，在順向 were found to show increased light extraction of 電流 20 mA下，其導通電壓約為 3.5 V，而發光效 12.5 ~ 27.5 % under a forward current of 20 mA with forward voltages of 3.26 ~ 3.5 V. 84 │