原子级单层二硫化钼带对带穿隧场效应电晶体-国家奈米元件实验室.PDFVIP

NANO COMMUNICATION 24 No. 1 11 Band-to-Band Tunneling Field-Effect Transistor in an Atomic-Monolayer MoS2 彥 (MoS ) 2 / p-n n+-n MoS2 MoS2 Abstract We report the experimental observation of band-to-band tunneling in novel tunneling field-effect transistors utilizing a monolayer of MoS 2 as the conducting channel. Our results indicate that a local top-gate electrode can electrostatically induce an in-plane/ lateral p-n or n+ -n junction with the application of either a negative or positive bias, respectively. As the top-gate voltage increases, ever larger internal electric fields manifest across a tunnel barrier that is locally induced along the monolayer MoS2 channel. This strong gate-coupling efficiency results in the direct manifestation of a band-to- band tunneling current and an ambipolar transport. Our results suggest that gate - modulated MoS2 tunneling field-effect transistor is a promising candidate for achieving potential low-power integrated circuits of n