曾彬112-113-B04.docVIP

Nd re Na) and (b) a p-type (Na Nd) sendconductor. N.l (cm--- 3) Na (c m -- 3) Figure 3.18l Position of Fend level as a function of donor concentration (n type) and acceptor concentration (p type). Equaton (3.68) can be used to find the difference between the intrinsic Fermi level and the Fermi energy in terms of the acceptor concentration. The hole concentration . po in Equation (3.68) is given by Equation (3.62). We can again note from Equation (3.65) that, for an n-type semiconductof, no De ni and EF EFi The Fermi level fOr an n-type semconductOr is above EFi. For a p-type semiconductor, po De ni, and from Equation (3.68) we see that EFi De EF The Fermi level for a p-type semiconductor is below EFi. These results are shown in Figure 3.l7. 3.6.2 Variation of EF with Dopillg Concentration and Temperature Fcrmi encrgy versus We can plot the position of the Fermi energy level as a function of the doping doping concentration. Figure 3.l8 shows the Fermi energy level as a funchon of donor concentration (n type) and as a function of acceptor concentration (p type) fOr silicon at T = 300 K. As the doping levels increase, the Fermi energy level moves closer To the conduction band for the n-type material and closer to the valence band for the p-type material .Keep in mind that the equations for the Fermi energy level that we have derived assume that the Boltzmann appriximation is valid. Determine the Fermi-level position and the maximum doping at which the Boltzmann appriximation is still valid. Consider p-type silicon, at T=300K, doped with boron. We can assume that the limit of the Boltzmann appriximation occurs when From Table 3.3,we find the ionization energy is eV for boron in silicon. If we assume that ，then from Equation the position of the Fermi level at the maximum doping is given by Or 0.56-0.045-3(0.0259)=0.473=(0.0259) ln() We can then solve for doping as If the acceptor (or donor) concentration in silicon is greater than approximately 3*,then t