等离子体辅助电子枪蒸发制备AlN薄膜及等离子体-华南师范大学学报.PDF

华南师范大学学报 (自然科学版) 2006年 5月 JOURNAL OF SOUTH CH INA NORMAL UN IVERSITY 2006年第 2期 M ay 2006 ( NATURAL SCIENCE EDITION ) No. 2, 2006 : 000- 5463( 2006) 02- 006 - 05 A lN 向鹏飞, 陈俊芳, 蒙高庆, 胡社军, 吴先球, 符斯列, 李 赟 ( , 5 0006) : TCP(Transverse coup led plasm a) , . TCP , . , ; , , . : ; T CP ; ; : O434. 4 : A PREPARED AlN THIN FILM S BY PLASMA ASSISTED ELECTRON BEAM EVAPORATION AND THE DIAGNOSIS OF PLASMA PARAMETERS X IANG Peng- fei, CHEN Jun- fang, MENG Gao- qing, HU Shejun, WU X iang- Q iu, FU S i- Lie, LIYun ( School of Physics and T elecomm unicationsEngineering, South China Norm alUniversity, Guangzhou 5 0006, China) Abstract: A lum in ium nitride th in film w as prepared at room temperature for the first tmi e by means ofTCP plasma assisted electron beam evaporation deposition. Analysis by Fourier transform infrared spectroscopy( FT- IR) reveals the FTIR characteristic ofA lN. The prop erties of spatial d istribution of p lasm a ion density in RF TCP plasma reaction chamberw ere diagnosed by a Langmuir probe and the effect of air pressure w ere investigated. Plasma ion density at the exit of ion fountain is big but w ith a poor un iform ity. P lasma ion diffuses quickly in reaction chamber, the density of it becomes small and the its p lasm a d istribution tends to become uniform. Key w rds: alum in ium n itride; TCP ion fountain; low temperature deposition; Langmu ir probe ( A lN) , a = 0. 3 4 nm, c= 0. 4 979 nm, : 2005- 0- 3 : ( 0575039); ( 05 00534); ( [ 2004] 65); ( [ 2005] Z3- D203 ) : ( 98 - ), , , 2003, Em a i:l xpf8 @ sina. com; ( 957 - ), , , , , , Em ai:l chenj@f