国产晶硅平板PECVD设备的优势(国外英语资料).docVIP

国产晶硅平板PECVD设备的优势(国外英语资料).doc

  1. 1、原创力文档(book118)网站文档一经付费(服务费),不意味着购买了该文档的版权,仅供个人/单位学习、研究之用,不得用于商业用途,未经授权,严禁复制、发行、汇编、翻译或者网络传播等,侵权必究。。
  2. 2、本站所有内容均由合作方或网友上传,本站不对文档的完整性、权威性及其观点立场正确性做任何保证或承诺!文档内容仅供研究参考,付费前请自行鉴别。如您付费,意味着您自己接受本站规则且自行承担风险,本站不退款、不进行额外附加服务;查看《如何避免下载的几个坑》。如果您已付费下载过本站文档,您可以点击 这里二次下载
  3. 3、如文档侵犯商业秘密、侵犯著作权、侵犯人身权等,请点击“版权申诉”(推荐),也可以打举报电话:400-050-0827(电话支持时间:9:00-18:30)。
  4. 4、该文档为VIP文档,如果想要下载,成为VIP会员后,下载免费。
  5. 5、成为VIP后,下载本文档将扣除1次下载权益。下载后,不支持退款、换文档。如有疑问请联系我们
  6. 6、成为VIP后,您将拥有八大权益,权益包括:VIP文档下载权益、阅读免打扰、文档格式转换、高级专利检索、专属身份标志、高级客服、多端互通、版权登记。
  7. 7、VIP文档为合作方或网友上传,每下载1次, 网站将根据用户上传文档的质量评分、类型等,对文档贡献者给予高额补贴、流量扶持。如果你也想贡献VIP文档。上传文档
查看更多
国产晶硅平板PECVD设备的优势(国外英语资料)

国产晶硅平板PECVD设备的优势(国外英语资料) PDF documents may have a poor browsing experience at the WAP end. It is recommended that you choose TXT, or download the source file to the native view. Advantage of domestic crystalline silicon tablet PECVD Dr. Wang baoquan SNEC in May, 2010 Booth location: W2 pavilion T2136 The technical advantage of the silicon tablet PECVD device is the competitive advantage of the ESSINDTM PECVD device in the northern microelectronic development tablet PECVD device confidential The technical advantage of the silicon tablet PECVD device is the competitive advantage of the ESSINDTM PECVD device in the northern microelectronic development tablet PECVD device confidential PECVD devices are used in silicon wafers solar cells PECVD (plasma enhanced chemical vapor deposition) technique is the use of plasma characteristics to control or influence gas instead With chemical reaction process on the surface of the material, and in the appropriate temperature (from room temperature to 500 ℃) under the deposition film. Crystalline silicon solar cell process Pretreatment of the printing of the PECVD sintered electrode printing etch diffusion The PECVD device is used to prepare the SiNx film The passivation properties prepare the sine attenuation properties confidential Short circuit current battery efficiency open circuit voltage PECVD equipment technique category The device structure is divided Plate type tube type The sedimentation principle is divided Direct method of indirect method Plasma Source SiH4, NH3 Plane loading board Hollow carbon box The graphite boat Plane loading board The graphite boat The function is distributed in different Chambers and the gas utilization is high automaticity high automaticity high production efficiency high automatic loading and unloading strip easy to realize equipment maintenance tedious The function is concentrated in the same furnace tube gas utilization low automaticity low automation degree low production efficiency low auto

文档评论(0)

f8r9t5c + 关注
实名认证
文档贡献者

该用户很懒,什么也没介绍

版权声明书
用户编号:8000054077000003

1亿VIP精品文档

相关文档