太阳能工程第四课.ppt

4-3-5 High-efficiency technology 1. p layer connected technology In the 3-3 Description of amorphous solar cells pin type for general. Because as the window layer, it is also effective to remove the load of the body. Need to be able to form a high quality of the internal electric field on the p layer, solar cells has reached a high efficiency. 1981 due to the use of wide-gap (Wide-Gap) material a-SiC, making the increase of a-Si cell characteristics. Opens the p layer of the material and tectonic studies. P-layer characteristics and solar cell characteristics of the relevant Series in Table 4-6 Table 4-6 Solar cell characteristics and the relationship of the p-layer characteristics * Solar cell? characteristics relevant characteristics of the P layer ISC Light?draw?coefficientIndex of refraction Voc Fermi?preparation(Activation energy) FF, Voc TCO/p, ,/iInterface characteristicsP-layer?thickness?and?properties of?homogeneous?surname 4-3-4 Solar cells for moving characteristics 1. PIN junction solar cell–(1) Actuation of analytical models Fig.4-54 shown in the model , the basic structure of a-Si solar cells for the pin junction, have a lot of built-in electric field(built-in field，Eb). In this area, bear body density general rays dark (thermal equilibrium), value is the larger. Fig.?4-54?pin?junction?and?pn junction?solar cell?energy levelconstruct * (1) p-layer material due to solar cell efficiency Fig. 4-62 for the use of a - SiC formed by plasma CVD method, I-V characteristics of the p layer of solar cells to increase in cases. This is because the a-SiC p layer of the reduced absorption coefficient and the Gap of Wide.。However, the p layer of the membrane properties are not fully there is a low FF problem to be solved. Figure 4-62 on the p layer of a-Si and a-Si solar cell characteristics * P-type a-SiC film light conductivity and optical Gap relations Fig. 4-63 relationship between used up by CVD to form a p-type conductivity o