产品概述general description 主要参数main characteristics.pdf

DG7N65 版本号：V1.1 N 沟道增强型场效应晶体管 N-CHANNEL ENHANCEMENT MODE MOSFET 产品概述 General Description DG7N65是N沟道增强型场效应晶体管，应用了东光微电的相关专利技术，采用自对准平面 工艺及先进的终端耐压技术，降低了导通损耗，提高了开关特性，增强了雪崩耐量。该产 品能应用于多种功率开关电路，使得电源能效更高，系统更加小型化。 DG7N65 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary. The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for higher efficiency and system miniaturization. 符号 Symbol 主要参数 MAIN CHARACTERISTICS VDSS 650 V ID 7 A RDS(ON) 1.2 Ω Crss 13 pF 封装 Package 1 / 10 绝对最大额定值 ABSOLUTE MAXIMUM RATINGS (Tc=25℃) 参数名称 符号 数值 单位 Parameter Symbol Value Unit 漏极-源极直流电压 VDSS 650 V Drain-Source Voltage Tc=25 ℃ 7* 连续漏极电流 ID A Continues Drain Current Tc=100 ℃ 4.0* 最大脉冲漏极电流 (注 1) IDM 25