AO4620数据手册.pdfVIP

  • 753
  • 0
  • 约4.23万字
  • 约 7页
  • 2017-07-03 发布于河南
  • 举报
AO4620数据手册

AO4620 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4620 uses advanced trench n-channel p-channel technology MOSFETs to provide excellent VDS (V) = 30V -30V RDS(ON) and low gate charge. The ID = 7.2A (VGS=10V) -5.3A (VGS = -10V) complementary MOSFETs may be used in RDS(ON) RDS(ON) inverter and other applications.Standard 24mΩ (VGS=10V) 38mΩ (VGS = -10V) Product

文档评论(0)

1亿VIP精品文档

相关文档