RLVIP技术制备Ge1-xCx薄膜的X射线光电子能谱.pdfVIP

第 16卷 第4期 光学精密工程 V01．16 No．4 2008年4月 Optics and Precision Engineering Apr．2008 文章编号 1004—924X(2008)04—0565—05 RLVIP技术制备Ge1一 C 薄膜的X射线光电子能谱 王彤彤 ，高劲松 ，宋 琦 ，王笑夷 ，陈 红 ，郑宣鸣 ，申振峰 (1中国科学院长春光学精密机械与物理研究所光学技术研究中心，吉林长春130033； 2．中国科学院研究生院，北京100039) 摘要：应用低压反应离子镀(RLVIP)技术在Ge基底上沉积了Ge 薄膜。制备过程中，低压等离子源作为辅助等离 子源，Ge作为蒸发材料，CH 作为反应气体，在相同的沉积条件下以不同的沉积速率制备了c含量(z)从0．23到0．78 的Ge 一 薄膜。x射线衍射测试表明制备的Ge 一 薄膜为无定形结构。用x射线光电子能谱研究了不同c含量下 Ge 一 薄膜中c的化学键合变化。研究结果表明：当zO．78时，成键为c—H键；当z为0．53～O．62时，成键为c— c键；当zO．47时，成键为Ge—C键。 关 键 词：Get…C 薄膜；低压反应离子镀；X射线光电子能谱；离子辅助沉积 中图分类号：O657．62：TN304．055 文献标识码：A X—ray photoelectron spectroscopy of Ge,一 C thin films prepared by RLVIP technique WANG Tong—tong ～，GAO Jin—song ，SONG Qi ，WANG Xiao—yi ， CHEN Hong ．ZHENG Xuan—ming ．SHEN Zhen—feng 一 (1．Optical Technology and Research Center，Changchun Institute of Optics， Fine Mechanics and Physics，Chinese Academy of Sciences，Changchun 130033，China； 2．Graduate School of the Chinese Academy of Sciences，Beijing 100039，China) Abstract：The Gel C thin films were deposited on germanium substrate by Reaction Low Voltage Ion Plating(RLVIP)technique．In preparation，a germanium was evaporated by an e-gun，and a methane was ionized as reactive gas，the Gel…C thin films with carbon content(z)of 0．23～0．78 were fabricated at different deposition rates and the same depositional condition．X—ray Diffraction (XRD)tests indicate that the films are amorphous．The chemical bonding properties of carbon were systematically investigated by X-ray Photoelectron Spectroscopy(XPS)，the results show that the chemical bondings with different hybridizations depend on C concentrations．As z is higher than 0．78， the bonding trends to a C— H；z is in the range of