双场管NDS9936.pdfVIP

  • 11
  • 0
  • 约4.45万字
  • 约 7页
  • 2017-07-24 发布于江苏
  • 举报
双场管NDS9936

February 1996 NDS9936 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 5A, 30V. R = 0.05 @ V = 10V. DS(ON) GS transistors are produced usin

文档评论(0)

1亿VIP精品文档

相关文档