influence of cu diffusion conditions on the switching of cu–sio2 .pdf

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influence of cu diffusion conditions on the switching of cu–sio2 .pdf

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influence of cu diffusion conditions on the switching of cu–sio2

Thin Solid Films 518 (2010) 3293–3298 Contents lists available at ScienceDirect Thin Solid Films journal homepage: /locate/ts f Inﬂuence of Cu diffusion conditions on the switching of Cu–SiO -based resistive 2 memory devices S. Puthen Thermadam a,⁎, S.K. Bhagat b, T.L. Alford b, Y. Sakaguchi c, M.N. Kozicki a, M. Mitkova c a Center for Applied Nanoionics, Arizona State University, Tempe, AZ 85287-6206, USA b School of Materials, Arizona State University, Tempe AZ 85287-8706, USA c Department of Electrical and Computer Engineering, Boise State University, Boise, ID 83725-2075, USA a r t i c l e i n f o a b s t r a c t Article history: This paper presents a study of Cu diffusion at various temperatures in thin SiO2 ﬁlms and the inﬂuence of Received 9 February 2009 diffusion conditions on the switching of Programmable Metallization Cell (PMC) devices formed from such Received in revised form 29 August 2009 Cu-doped ﬁlms. Film composition and diffusion products were analyzed using secondary ion mass Accepted 10 September 2009 spectroscopy, Rutherford backscattering spectrometry, X-ray diffraction and Raman spectroscopy methods. Available online 19 September 2009 −3 We found a strong dependence of the diffused Cu concentration, which varied