A Wideband Low-Phase-Noise CMOS VCO（一个宽带低相位噪声CMOS VCO）.pdfVIP

A Wideband Low-Phase-Noise CMOS VCO Axel D. Berny, Ali M. Niknejad and Robert G. Meyer Berkeley Wireless Research Center Department of Electrical Engineering and Computer Science University of California, Berkeley, CA 94720 Abstract Circuit Design A CMOS VCO has been designed and fabricated in a An LC VCO topology is chosen mainly for its potential to commercial 0.25µm CMOS process. Using a combination of achieve good phase noise performance, relative to ring switched binary-weighted capacitors and standard varactors, oscillators or other types of relaxation VCOs. The LC tank this VCO achieves a 28% tuning range with a control voltage consists of integrated spiral inductors, P+/N-WELL varactors ranging from 0-2 V, while maintaining a tuning sensitivity of allowing continuous frequency tuning, and an array of binary- less than 75 MHz/V over its entire frequency range. Compact weighted switched capacitors providing coarse tuning steps. choke inductors are used in place of resistors to provide a low Compact bias chokes are used to bias the anode-side of the noise bias point to the varactors. The choke inductors achieve varactors. This design is implemented in a 0.25µm bulk more than 90 nH of effective inductance while consuming a CMOS technology with a thick top metal layer. 2