单晶硅的生产过程（Production process of monocrystalline silicon）.docVIP

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单晶硅的生产过程（Production process of monocrystalline silicon）.doc

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单晶硅的生产过程（Production process of monocrystalline silicon）

单晶硅的生产过程（Production process of monocrystalline silicon） First, the preparation of monocrystalline silicon is usually prepared by polycrystalline silicon or amorphous silicon, and then Czochralski or levitation method is used to grow the rod like silicon crystal. When the molten silicon is solidified, the silicon atoms are arranged into many nuclei in a diamond lattice, and if these nuclei grow into crystalline grains with the same orientation, these grains are united in parallel and crystallized into monocrystalline silicon. Single crystal silicon rod is the raw material for producing monocrystalline silicon wafer. As the demand for monocrystalline silicon wafer increases rapidly both at home and abroad, the market demand of monocrystalline silicon rod is also increasing rapidly. Monocrystalline silicon wafers are divided into 6 inches, 8 inches, 12 inches (300 millimeters) and 18 inches (450 millimeters) in diameter. The larger diameter of the wafer, the integrated circuit chip can more engraving, lower the cost of. But larger size wafers require more material and technology. Monocrystalline silicon is divided into Czochralski method (CZ), zone melting method (FZ) and epitaxial method according to the crystal growth methods. Czochralski method and zone melting method for growth of single crystal silicon steel and epitaxial growth of monocrystalline silicon films. Czochralski growth of monocrystalline silicon is mainly used in semiconductor integrated circuits, diodes, epitaxial wafers, substrates, solar cells. The crystal diameter can be controlled at about 3~8 inches. Zone melting single crystal is mainly used in the field of high-voltage high-power rectifier devices. It is widely used in large power transmission and transformation, electric locomotive, rectifier, frequency conversion, mechanical and electrical integration, energy-saving lamps, TV sets and other products. The crystal diameter can be controlled at about 3~6 inches. Epitaxial wafers are mainly used