硅压阻式传感器的温度特性及其补偿.PDFVIP

硅压阻式传感器的温度特性及其补偿 樊尚春, 彭春荣 (北京航空航天大学自动化学院, 北京 100083) E-mail:miusensor @ :基于硅压阻式传感器的工艺过程与 续电路设计, 讨论了减小其温度影响的措施。文中对 在相同的硅基底上, 采用诸如扩散、离子注入、薄膜淀积以及溅射等不同加工工艺制作实现的不同 的压敏电阻特性, 特别是温度特性进行了探讨和比较。针对一种具体的硅杯结构的压阻式传感器, 设计、选择了加工工艺, 给出了压敏电阻的近似温度补偿公式, 讨论了传感器补偿电路的实现方案。 :压阻式传感器;硅传感器;温度补偿 :TP212 　:A　:1671-4776(2003)07/08-0484-05 Temperature properties and compensation for silicon piezoresistive sensors FAN Shang-chun, PEN Chun-rong (School of A utomation Science And Electrical Engineering, Beihang University, Beij ing 100083, China) Abstract :Based on thefabrication processof silicon piezoresistive sensors and the design of subsequent conditioning circuit, the measures for reducing the temperature effects on the sensors were discussed. The properties, especially the temperature property of the piezoresistors , which were manufactured using different processes such as diffusion, ion implantation, deposition and sputtering of films,were studied and compared in this paper.For a kind of silicon piezoresistive sensors with silicon-cup struc- ture, the fabrication processes were designed and selected.An approximate polynomial was given for temperature compensation and realization scheme for compensation circuit of sensors was discussed. Key words:piezoresistive sensors;silicon sensors;temperature compensation 压敏电阻 制备工艺以及压敏电阻特性进行分析和 1　引　言 研究。 硅压阻式压力传感器因灵敏度高、线性度好、稳 尽管硅压阻式压力传感器具有很多 优点, 然 定性好, 容易实现批量生产, 易于利用标准 IC 技 而实际 硅压阻式压力传感器仍然存在相当一部分 [2] 术实现集成化等成为目前应用最广泛 微机械产品 零压力输出偏置以及温度漂移 。其中主要 [1, 2] 原因是由于因温度变化引起压敏电阻 特性及其压 之一 。 随着微机械加工